In this seminar, studies on Hall effects and their inverses in transition metal dichalcogenides (TMDs) will be presented, utilizing spin pumping as the primary tool. Thin films of yttrium iron garnet (YIG), produced by magnetron sputtering, were used as spin current injectors into monolayers and multilayers of TMDs. Automated mechanical exfoliation technique was employed for growing multilayers of different TMDs on YIG, while monolayers of molybdenum disulfide (MoS2) were obtained through chemical vapor deposition. Spin pumping results on various types and thicknesses of TMDs indicated the existence of inverse Rashba-Edelstein effect at the YIG/TMD heterostructure interface. In MoS2 monolayers, two contributions to spin pumping were identified. The first originated from conductive states present at the edges, while the second stemmed from semiconductor states within the crystal area. Manipulation of the average size of these crystals revealed a competition between the contributions of these two electronic states to spin pumping. Moreover, depending on the ratio between these two states, it was investigated that the excitation of light-induced metallic states is capable of modulating spin current injection, either increasing, decreasing, or completely nullifying the phenomenon.